The $L_{T}$ distribution in the MisID-enriched region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 3L below-Z signal region. The last bin contains the overflow events.

The $M_{T}$ distribution in the 3L on-Z signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 3L above-Z signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 3L OSSF0 signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 4L OSSF0 signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 4L OSSF1 signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 4L OSSF2 signal region. The last bin contains the overflow events.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 4L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 4L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 4L(ee) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 4L(ee) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 4L(ee) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 4L(ee) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 4L($\mu\mu$) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 4L($\mu\mu$) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The 95% confidence level exclusion limits for the flavor-democratic scenario on the total production cross section of heavy fermion pairs.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(S) and $\mathcal{B}(\phi - {ee})$.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(PS) and $\mathcal{B}(\phi - {ee})$.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(S) and $\mathcal{B}(\phi - {\mu\mu})$.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(PS) and $\mathcal{B}(\phi - {\mu\mu})$.

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {ee})$ for tt$\phi$(S).

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {ee})$ for tt$\phi$(PS).

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$ for tt$\phi$(S).

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$ for tt$\phi$(PS).

Product of the fiducial acceptance and the event selection efficiency for the type-III Seesaw signal model at various signal mass hypotheses calculated after all analysis selection requirements.

Product of the fiducial acceptance and the event selection efficiency for the tt$\phi$ signal models at various signal mass hypotheses calculated after all analysis selection requirements.

Expected and observed upper limits on $\tan\beta$ as a function of $m_{H^{+}}$ in the hMSSM scenario of the MSSM. Limits are shown for $\tan\beta$ values in the range of 0.5-60, where predictions are available from both scenarios. The bands surrounding the expected limits show the 68% and 95% confidence intervals. The limits are based on the combination of the $\ell+$jets and $\ell\ell$ final states. The production cross-section of $t\bar{t}H$ and $tH$, as well as the branching ratios of the $H$, are fixed to their SM values at each point in the plane. Uncertainties on the predicted $H^{+}$ cross-sections or branching ratios are not considered.

Expected and observed lower limits on $\tan\beta$ as a function of $m_{H^{+}}$ in the hMSSM scenario of the MSSM. Limits are shown for $\tan\beta$ values in the range of 0.5-60, where predictions are available from both scenarios. The bands surrounding the expected limits show the 68% and 95% confidence intervals. The limits are based on the combination of the $\ell+$jets and $\ell\ell$ final states. The production cross-section of $t\bar{t}H$ and $tH$, as well as the branching ratios of the $H$, are fixed to their SM values at each point in the plane. Uncertainties on the predicted $H^{+}$ cross-sections or branching ratios are not considered.