The $L_{T}$ distribution in the MisID-enriched region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 3L below-Z signal region. The last bin contains the overflow events.

The $M_{T}$ distribution in the 3L on-Z signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 3L above-Z signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 3L OSSF0 signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 4L OSSF0 signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 4L OSSF1 signal region. The last bin contains the overflow events.

The $L_{T}+p^{miss}_{T}$ distribution in the 4L OSSF2 signal region. The last bin contains the overflow events.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 3L(ee) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 3L(ee) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 4L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 4L(ee) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 4L(ee) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 4L(ee) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{20}$ distribution in the 4L(ee) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dielectron $M_{OSSF}^{300}$ distribution in the 4L(ee) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {ee})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 0B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 0B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 1B, 400<$S_{T}$<800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 3L($\mu\mu$) 1B, $S_{T}$>800 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$<400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 4L($\mu\mu$) 0B, $S_{T}$>400 GeV signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{20}$ distribution in the 4L($\mu\mu$) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The dimuon $M_{OSSF}^{300}$ distribution in the 4L($\mu\mu$) 1B signal region. The last bin does not contain the overflow events. The signal is shown with $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$=0.05.

The 95% confidence level exclusion limits for the flavor-democratic scenario on the total production cross section of heavy fermion pairs.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(S) and $\mathcal{B}(\phi - {ee})$.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(PS) and $\mathcal{B}(\phi - {ee})$.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(S) and $\mathcal{B}(\phi - {\mu\mu})$.

The 95% confidence level exclusion limits on the product of the total production cross section of tt$\phi$(PS) and $\mathcal{B}(\phi - {\mu\mu})$.

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {ee})$ for tt$\phi$(S).

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {ee})$ for tt$\phi$(PS).

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$ for tt$\phi$(S).

The 95% confidence level exclusion limits on $g_{t}^2\mathcal{B}(\phi - {\mu\mu})$ for tt$\phi$(PS).

Product of the fiducial acceptance and the event selection efficiency for the type-III Seesaw signal model at various signal mass hypotheses calculated after all analysis selection requirements.

Product of the fiducial acceptance and the event selection efficiency for the tt$\phi$ signal models at various signal mass hypotheses calculated after all analysis selection requirements.